ResearcherID: C-4214-2008
Note: DOI addresses should be clickable. If not, enter the DOI code at this URL: http://dx.doi.org/
Section 1: Refereed papers in primary journals
Energetics of Donor-Doping, Metal Vacancies, and Oxygen-Loss in A-Site Rare-Earth-Doped BaTiO3
Colin L. Freeman, James A. Dawson, Hung-Ru Chen, Liubin Ben, John H. Harding, Finlay D. Morrison, Derek C. Sinclair, Anthony R. West
Adv. Funct. Mater., Early View (online version)
Magnetically Driven Dielectric and Structural Behavior in Bi0.5La0.5FeO3
Christopher M. Kavanagh, Richard J. Goff, Aziz Daoud-Aladine, Philip Lightfoot and Finlay D. Morrison
Chem. Mater., 24 (23), 4563, 2012.
DOI: 10.1021/cm302513q
Structural, Magnetic, and Electrical Properties of Bi1–xLaxMnO3 (x = 0.0, 0.1, and 0.2) Solid Solutions
Wei-Tin Chen, Falak Sher, Neil D. Mathur, Christopher M. Kavanagh, Finlay D. Morrison, and J. Paul Attfield
Chem. Mater., 24 (1), 199, 2012.
DOI: 10.1021/cm202900v
Structural, magnetic and electrical properties of the hexagonal ferrites MFeO3 (M=Y, Yb, In)
Lewis J. Downie, Richard J. Goff, Winfried Kockelmann, Sue D. Forder, Julia E. Parker, Finlay D. Morrison, Philip Lightfoot
J. Solid State Chem., 190, 52-60, 2012.
DOI: 10.1016/j.jssc.2012.02.004
Phase Separation and Phase Transitions in Multiferroic K0.58FeF3 with the Tetragonal Tungsten Bronze Structure
Sandra A. Reisinger, Marc Leblanc, Anne-Marie Mercier, Chiu C. Tang, Julia E. Parker, Finlay D. Morrison, and Philip Lightfoot
Chem. Mater., 23 (24), 5440, 2011.
DOI: 10.1021/cm202713n
Structural Phase Transition in the S=1/2 Kagome System Cs2ZrCu3F12 and a Comparison to the Valence-Bond-Solid Phase in Rb2SnCu3F12
Sandra A. Reisinger, Chiu C. Tang, Stephen P. Thompson, Finlay D. Morrison and Philip Lightfoot
Chem. Mater., 23 (18), 4234, 2011.
DOI: 10.1021/cm201762f
Origin and stability of the dipolar response in a family of tetragonal tungsten bronze relaxors
Andrei Rotaru, Donna C. Arnold, Aziz Daoud-Aladine and Finlay D. Morrison
Phys. Rev. B, 83, 184302, 2011.
DOI: 10.1103/PhysRevB.83.184302
The Beta-to-Gamma Transition in BiFeO3: A Powder Neutron Diffraction Study
Donna C. Arnold, Kevin S. Knight, Gustau Catalan, Simon A. T. Redfern, James F. Scott, Philip Lightfoot, and Finlay D. Morrison
Adv. Funct. Mater., 20, 2116–2123, 2010.
B-cation effects in relaxor and ferroelectric tetragonal tungsten bronzes
Donna C. Arnold and Finlay D. Morrison
J. Mater. Chem., 19, 6485–6488, 2009.
DOI: 10.1039/b912535c
Leakage and protonic conduction in the predicted ferroelectric CsBiNb2O7
R.J. Goff, D. Keeble, P.A. Thomas, C. Ritter, F.D. Morrison and P. Lightfoot
Chem. Mater., 21, 1296, 2009.
DOI: 10.1021/cm8030895
Impedance Spectroscopy Studies on Polycrystalline BiFeO3 Thin Films on Pt/Si Substrates
A. Srivastava, A. Garg and F.D. Morrison
J. Appl. Phys., 105, 054103, 2009.
DOI: 10.1063/1.3078822
Ferroelectric-Paraelectric Transition in BiFeO3: Crystal Structure of the Orthorhombic Phase
D.C. Arnold, K.S. Knight, F.D. Morrison and P. Lightfoot
Phys. Rev. Lett., 102, 027602, 2009.
DOI: 10.1103/PhysRevLett.102.027602
Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets
L. W. Chang, M. McMillen, F. D. Morrison, J. F. Scott and J. M. Gregg
Appl. Phys. Lett., 93, 132904, 2008.
DOI: 10.1063/1.2990760
Submicron [3D] Trenched Electrodes and Capacitors for DRAMs and FRAMs: Fabrication and Electrical Testing
M. Miyake , J.F. Scott, X.J. Lou , F.D. Morrison, T. Nonaka , S. Motoyama , T. Tatsuta, O. Tsuji
J. Appl. Phys., 104, 064112, 2008.
DOI: 10.1063/1.2981197
Solution-process coating of vertical ZnO nanowires with ferroelectrics
S. Kawasaki, H.J. Fan, G. Catalan, F.D. Morrison, T. Tatsuta, O. Tsuji, and J.F. Scott
Nanotechnology, 19, 375302, 2008.
DOI: 10.1088/0957-4484/19/37/375302
Conformal oxide coating of carbon nanotubes
S. Kawasaki, G. Catalan, H.J. Fan, M.M. Saad, J.M. Gregg, M.A. Correa-Duarte, J. Rybczynski, F. D. Morrison, T. Tatsuta, O. Tsuji, and J.F. Scott
Appl. Phys. Lett., 92, 053109, 2008.
DOI: 10.1063/1.2841710
Constant-phase-element (CPE) modelling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors
F.D. Morrison, D.J. Jung and J.F. Scott
J. App. Phys., 101, 094112, 2007.
DOI: 10.1063/1.2723194
Impedance spectroscopy of epitaxial multiferroic thin films
R. Schmidt, W. Eerenstein, T. Winiecki, F.D. Morrison and P.A. Midgley
Phys. Rev. B., 75 245111, 2007.
DOI: 10.1103/PhysRevB.75.245111
Towards Self-assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/inch2 Densities
P.R. Evans, X. Zhu, P. Baxter, R.J. Pollard, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott
Nano Lett., 7 (5), 1134, 2007.
DOI: 10.1021/nl0626028
Perovskite Lead Zirconium Titanate Nanorings: Towards Nanoscale Ferroelectric ‘Solenoids’?
X.H. Zhu, P.R. Evans, D. Byrne, A. Schilling, C. Douglas, R.J. Pollard, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott
Appl. Phys. Lett., 89, 122913, 2006.
DOI: 10.1063/1.2347893
Phase separation in lead zirconate titanate and bismuth titanate during electrical shorting and fatigue
X.-J. Lou, X.-B. Hu, M. Zhang, F.D. Morrison, S.A.T. Redfern and J.F. Scott
J. Appl. Phys., 99 044101, 2006.
DOI: 10.1063/1.2171783
Growth of highly resistive epitaxial BiMnO3 films
W. Eerenstein, F.D. Morrison, J.F. Scott, N.D. Mathur
Appl. Phys. Lett., 86, 110196, 2005.
DOI: 10.1063/1.2039988
Interaction between quantum paraelectricity and ferroelasticity in SrTiO3
S.A. Hayward, F.D. Morrison and J.F. Scott,
J. Phys.: Condens. Matt., 17, 7009-7022, 2005
DOI: 10.1088/0953-8984/17/43/018
Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures
J.F. Scott, P. Zubko, X.-J. Lou, F.D. Morrison, S. Rios, D.J. Jung, V.M. Kugler, M. Zhang, M. Miyake, M.M. Saad, A. Lookman, R.M. Bowman, J.M. Gregg, T.J. Leedham, O. Tsuji and T. Tatsuta
J. Am. Ceram. Soc., 88, 1691-1701, 2005.
DOI: 10.1111/j.1551-2916.2005.00486.x
Transformation processes in LaAlO3: neutron diffraction, dielectric, thermal, optical and Raman studies
S.A. Hayward, F.D. Morrison, S.A.T. Redfern, E.K.H. Salje, J.F. Scott, K.S. Knight, S. Tarantino, A.M. Glazer, V. Shuvaeva, P. Daniel, M. Zhang, M.A. Carpenter
Phys. Rev. B., 72, 054110, 2005.
DOI: 10.1103/PhysRevB.72.054110
High-Field Conduction in Barium Titanate
F.D. Morrison, P. Zubko, D.J. Jung, J.F. Scott, P. Baxter, M.M. Saad, J.M. Gregg and R.M. Bowman
Appl. Phys. Lett., 86, 152903, 2005.
DOI: 10.1063/1.1886899
Comment on Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
W. Eerenstein, F.D. Morrison, J. Dho, M.G. Blamire, J.F. Scott and N.D. Mathur
Science, 307 (5713), 1203a, 2005.
Fatigue Studies in Compensated Bulk Lead Zirconate Titanate
C. Verdier, F.D. Morrison, D.C. Lupascu and J.F. Scott
J. App. Phys., 97 (2) 024107, 2005.
DOI: 10.1063/1.1829790
Intrinsic dielectric response in ferroelectric nano-capacitors
M.M. Saad, P. Baxter, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott
J. Phys.: Condens. Matt., 16, L451-456, 2004.
DOI: 10.1088/0953-8984/16/41/L04
Effect of micro-geometry on switching and Transport in PZT capacitors: Implications for Etching in Nano-Ferroelectrics
D.J. Jung, F.D. Morrison, M. Dawber, H.H. Kim, K. Kim and J.F. Scott
J. App. Phys., 95 (9), 4968-75, 2004.
DOI: 10.1063/1.1688990
Ferroelectric Nanotubes
F.D. Morrison, Y. Luo, I. Szafraniak, V. Nagarajan, R.B. Wehrspohn, M. Steinhart, J.H. Wendorff, N.D. Zakharov, E.D. Mishina, K.A. Vorotilov, A.S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, and J.F. Scott
Rev. Adv. Mat. Sci., 4 (2), 114-122, 2003.
URL: http://www.ipme.ru/e-journals/RAMS/no_2403/morrison/morrison.pdf
High-Aspect-Ratio Piezoelectric Strontium-Bismuth-Tantalate Nanotubes
F.D. Morrison, L. Ramsay and J.F. Scott,
J. Phys.: Condens. Matt., 15, L527-L532, 2003.
DOI: 10.1088/0953-8984/15/33/103
CaCu3Ti4O12: one-step internal barrier layer capacitor
D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West
Appl. Phys. Lett., 80 (12), 2153-2155, 2002.
DOI: 10.1063/1.1463211
Charge Compensation Mechanisms in La-doped BaTiO3
F.D. Morrison, D.C. Sinclair and A.R. West
J. Electroceram., 6 (3), 219-242, 2001.
Characterization of La-Doped BaTiO3 Ceramics Using Impedance Spectroscopy
F.D. Morrison, D.C. Sinclair and A.R. West
J. Am. Ceram. Soc., 84 (3), 531-538, 2001.
DOI: 10.1111/j.1151-2916.2001.tb00694.x
An Alternative Explanation for the Origin of the Resistivity Anomaly in La-Doped BaTiO3
F.D. Morrison, D.C. Sinclair and A.R. West
J. Am. Ceram. Soc., 84 (2), 474-476, 2001.
DOI: 10.1111/j.1151-2916.2001.tb00684.x
Electrical and structural characteristics of lanthanum-doped barium titanate ceramics
F.D. Morrison, D.C. Sinclair and A.R. West
J. Appl. Phys., 88 (11), 6355-66, 1999.
DOI: 10.1063/1.371698
Structure and electrical properties of oxygen-deficient hexagonal BaTiO3
D.C. Sinclair, J.M.S. Skakle, F.D. Morrison, R.I. Smith and T.P. Beales
J. Mater. Chem., 9, 1327-31, 1999.
DOI: 10.1039/a900957d
Dielectric Properties of Spark-Plasma-Sintered BaTiO3
T. Takeuchi, E. Bétourné, M. Tabuchi, Y. Kobayashi, A.M. Coats, F.D. Morrison, D.C. Sinclair, A.R. West and H. Kageyama
J. Mat. Sci., 34, 917-24, 1999.
Novel Doping Mechanism to Very-High-Permittivity Barium Titanate Ceramics
F.D. Morrison, D.C. Sinclair, J.M.S. Skakle and A.R. West
J. Am. Ceram. Soc., 81 (7), 1957-60, 1998.
DOI: 10.1111/j.1151-2916.1998.tb02575.x
Section 2: (Refereed) Contributions to symposia and compiled volumes
Ferroelectric Thin-Film Devices
J. F. Scott and F. D. Morrison
Ferroelectrics, 371(1) 3, 2008.
DOI: 10.1080/00150190802384500
Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes
M. Miyake, J.F. Scott, X.J. Lou, F.D. Morrison, S. Motoyama, T. Tatsuta and O. Tsuji
Sixteenth IEEE International Symposium on Applications of Ferroelectrics (ISAF 2007), 27-31, 38-41, 2007.
DOI: 10.1109/ISAF.2007.4393160
Ferroelectric Thin-Film Devices: Failure Mechanisms and New Prototype Nano-Structures
J.F. Scott, F.D. Morrison, Y.K. Hoo, A.D. Milliken, H.J. Fan, S. Kawasaki, M. Miyake, T. Tatsuta, O. Tsuji
Sixteenth IEEE International Symposium on Applications of Ferroelectrics (ISAF 2007), 27-31, 5 – 8, 2007.
DOI: 10.1109/ISAF.2007.4393150
Nanoscale ferroelectrics machined from single crystals
A. Schilling, T.B. Adams, M.M. Saad, P. Baxter, F.D. Morrison, G. Catalan, J.F. Scott, R.M. Bowman, J.M. Gregg
Integr. Ferroelectr., 92, 53-64, 2007.
DOI: 10.1080/10584580701746889
Liquid Source Misted Chemical Deposition Process Of Three-Dimensional Nano-Ferroelectrics With Substrate Heating
S. Kawasaki, J. F. Scott, H. Fan, G. Catalan, M. M. Saad, J. M. Gregg, M. A. Correa, F. D. Morrison, T. Tatsuta, O. Tsuji
Integr. Ferroelectr., 95, 180- 86, 2007.
DOI: 10.1080/10584580701758793
Experimental difficulties and artefacts in multiferroic and magnetoelectric thin films of BiFeO3, Bi0.6Tb0.3La0.1FeO3 and BiMnO3
W. Eerenstein, F.D. Morrison, F. Sher, J.L. Prieto, J.P. Attfield, J.F. Scott and N.D. Mathur
Phil. Mag. Lett., 87 (3-4), 249-257, 2007.
DOI: 10.1080/09500830601173053
Investigating the effects of reduced size on the properties of ferroelectrics
M.M. Saad, P. Baxter, J. McAneney, A. Lookman, L.J. Sinnamon, P. Evans, A. Schilling, T. Adams, X. Zhu, R.J. Pollard, R.M. Bowman, J.M. Gregg, D.J. Jung, F.D. Morrison and J.F. Scott
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 53 (12) 2208, 2006.
Nano-Ferroelectric Materials and Devices
J.F. Scott, F.D. Morrison, M. Miyake and P. Zubko
Ferroelectrics, 336, 237, 2006.
DOI: 10.1080/00150190600697699
Layered Functional Ceramics via Misted Chemical Solution Deposition
J.F. Scott, F.D. Morrison, M. Miyake, T. Tatsuta, O. Tsuji
Key Engineering Materials, 333 71, 2007.
URL: http://www.scientific.net/0-87849-424-3/71/
Ferroelectric Properties of FIB-prepared single crystal nanocapacitors
A. Schilling, M.M. Saad, P. Baxter, T. Adams, R. M. Bowman, J. M. Gregg, F. D. Morrison and J. F. Scott
NSTI-Nanotech 2005 Proceedings, ISBN 0-9767985-1-4, Vol. 2, 2005
URL: http://www.nsti.org/procs/Nanotech2005v2/5/M31.04
High-temperature amorphous hafnia (HfO2) for microelectronics
M. Miyake, X. -J. Lou, Ming Zhang, F. D. Morrison, T. J. Leedham, T. Tatsuta, O. Tsuji, J. F. Scott
Integr. Ferroelectr., 74, 165-172, 2005.
DOI: 10.1080/10584580500414176
Exploring the fundamental effects of miniaturisation on ferroelectrics by focused ion beam processing of single crystal material
M.M. Saad, P. Baxter, A. Schilling, T.B. Adams, X. Zhu, R.M. Bowman, J.M. Gregg, P. Zubko, F.D. Morrison and J.F. Scott
J. Phys. IV, 128, 63-70, 2005.
Novel High Capacitance Materials:- BaTiO3:La and CaCu3Ti4O12
A.R. West, T.B. Adams, F.D. Morrison and D.C. Sinclair
J. Euro. Ceram. Soc., 24, 1439-1448, 2004 (Proceedings of Electroceramics VIII, 2002, Rome, Italy)
DOI: 10.1016/S0955-2219(03)00510-7
New Developments in Ferroelectric Thin Films
J.F. Scott, M. Dawber, A.Q. Jiang and F.D. Morrison
Ferroelectrics, 286, 223-235, 2003.
DOI: 10.1080/00150190390206400
Probing Interfacial Phenomena in CaCu3Ti4O12 and La-doped BaTiO3 Ceramics Using Impedance Spectroscopy,
D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West
Chapter in “Grain Boundary Engineering in Electronic Materials”, ed. R. Freer, J. Van Herle, J. Petzel and C. Leech, Maney, Leeds, 2003. ISBN 1 90265 377 7
Use of the "Mist" (Liquid-Source) Deposition System to Produce New High-Dielectric Devices: Ferroelectric-filled Photonic Crystals and Hf-oxide and Related Buffer Layers for Ferroelectric-Gate FETs
F.D. Morrison, J. F. Scott, M. Alexe, T.J. Leedham, T. Tatsuta and O. Tsuji
Microelectron. Eng., 66 (1-4), 591-599, 2003 (Proceedings of IUMRS 8th International Conference on Electronic Materials, 2002, Xi’an, China)
DOI: 10.1016/S0167-9317(02)00970-X
Doping Mechanisms and Electrical Properties of La-Doped BaTiO3 Ceramics
F.D. Morrison, D.C. Sinclair and A.R. West
Int. J. Inorg. Mat., 3, 1205-1210, 2001 (Proceedings of E-MRS Spring Meeting 2000, Strasbourg, France)
DOI: 10.1016/S1466-6049(01)00128-3
Applications of Combined Impedance and Electric Modulus Spectroscopy to Characterise Electroceramics
D.C. Sinclair, F.D. Morrison and A.R. West
International Ceramics, Issue 2, 33-38, 2000.
DOI: N/A
Section 3: Patents
Patent info: GB2429202
IP Title: Deposition of Layers on Substrates, Inventor(s): MORRISON, F.D., SCOTT J.F., Published 26.09.2007.
Patent info: GB2435265
IP Title: Processes of Forming Small Diameter Rods and Tubes, MORRISON, F.D., SCOTT J.F., Published 10.10.2007
Patent info: GB2435266
IP Title: Processes of Forming Small Diameter Rods and Tubes, MORRISON, F.D., SCOTT J.F., Published 10.10.2007
British Patent Application No. 0607890.1, filed April 2006. International Application No. PCT/GB2007/001437
IP Title: Nanostructures and a Method for the manufacture of the same (Single Layer Nanocapacitors), Inventor(s): BOWMAN R.M., GREGG J.M., POLLARD R.J., MORRISON F.D., SCOTT J.F.