ResearcherID: C-4214-2008 


Note: DOI addresses should be clickable. If not, enter the DOI code at this URL: http://dx.doi.org/


Section 1: Refereed papers in primary journals


Energetics of Donor-Doping, Metal Vacancies, and Oxygen-Loss in A-Site Rare-Earth-Doped BaTiO3

Colin L. Freeman, James A. Dawson, Hung-Ru Chen, Liubin Ben, John H. Harding, Finlay D. Morrison, Derek C. Sinclair, Anthony R. West

Adv. Funct. Mater., Early View (online version)

DOI: 10.1002/adfm.201203147


Magnetically Driven Dielectric and Structural Behavior in Bi0.5La0.5FeO3

Christopher M. Kavanagh, Richard J. Goff, Aziz Daoud-Aladine, Philip Lightfoot and Finlay D. Morrison

Chem. Mater., 24 (23), 4563, 2012.

DOI: 10.1021/cm302513q


Structural, Magnetic, and Electrical Properties of Bi1–xLaxMnO3 (x = 0.0, 0.1, and 0.2) Solid Solutions

Wei-Tin Chen, Falak Sher, Neil D. Mathur, Christopher M. Kavanagh, Finlay D. Morrison, and J. Paul Attfield

Chem. Mater., 24 (1), 199, 2012.

DOI: 10.1021/cm202900v


Structural, magnetic and electrical properties of the hexagonal ferrites MFeO3 (M=Y, Yb, In)

Lewis J. Downie, Richard J. Goff, Winfried Kockelmann, Sue D. Forder, Julia E. Parker, Finlay D. Morrison, Philip Lightfoot

J. Solid State Chem., 190, 52-60, 2012.

DOI: 10.1016/j.jssc.2012.02.004


Phase Separation and Phase Transitions in Multiferroic K0.58FeF3 with the Tetragonal Tungsten Bronze Structure

Sandra A. Reisinger, Marc Leblanc, Anne-Marie Mercier, Chiu C. Tang, Julia E. Parker, Finlay D. Morrison, and Philip Lightfoot

Chem. Mater., 23 (24), 5440, 2011.

DOI: 10.1021/cm202713n


Structural Phase Transition in the S=1/2 Kagome System Cs2ZrCu3F12 and a Comparison to the Valence-Bond-Solid Phase in Rb2SnCu3F12

Sandra A. Reisinger, Chiu C. Tang, Stephen P. Thompson, Finlay D. Morrison and Philip Lightfoot

Chem. Mater., 23 (18), 4234, 2011.

DOI: 10.1021/cm201762f


Origin and stability of the dipolar response in a family of tetragonal tungsten bronze relaxors

Andrei Rotaru, Donna C. Arnold, Aziz Daoud-Aladine and Finlay D. Morrison

Phys. Rev. B, 83, 184302, 2011.

DOI: 10.1103/PhysRevB.83.184302


The Beta-to-Gamma Transition in BiFeO3: A Powder Neutron Diffraction Study

Donna C. Arnold, Kevin S. Knight, Gustau Catalan, Simon A. T. Redfern, James F. Scott, Philip Lightfoot, and Finlay D. Morrison

Adv. Funct. Mater., 20, 2116–2123, 2010.

DOI: 10.1002/adfm.201000118


B-cation effects in relaxor and ferroelectric tetragonal tungsten bronzes

Donna C. Arnold and Finlay D. Morrison

J. Mater. Chem., 19, 6485–6488, 2009.

DOI: 10.1039/b912535c


Leakage and protonic conduction in the predicted ferroelectric CsBiNb2O7

R.J. Goff, D. Keeble, P.A. Thomas, C. Ritter, F.D. Morrison and P. Lightfoot

Chem. Mater., 21, 1296, 2009.

DOI: 10.1021/cm8030895


Impedance Spectroscopy Studies on Polycrystalline BiFeO3 Thin Films on Pt/Si Substrates

A. Srivastava, A. Garg and F.D. Morrison

J. Appl. Phys., 105, 054103, 2009.

DOI: 10.1063/1.3078822


Ferroelectric-Paraelectric Transition in BiFeO3: Crystal Structure of the Orthorhombic Phase

D.C. Arnold, K.S. Knight, F.D. Morrison and P. Lightfoot

Phys. Rev. Lett., 102, 027602, 2009.

DOI: 10.1103/PhysRevLett.102.027602


Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

L. W. Chang, M. McMillen, F. D. Morrison, J. F. Scott and J. M. Gregg

Appl. Phys. Lett., 93, 132904, 2008.

DOI: 10.1063/1.2990760


Submicron [3D] Trenched Electrodes and Capacitors for DRAMs and FRAMs: Fabrication and Electrical Testing

M. Miyake , J.F. Scott, X.J. Lou , F.D. Morrison, T. Nonaka , S. Motoyama , T. Tatsuta, O. Tsuji

J. Appl. Phys., 104, 064112, 2008.

DOI: 10.1063/1.2981197


Solution-process coating of vertical ZnO nanowires with ferroelectrics

S. Kawasaki, H.J. Fan, G. Catalan, F.D. Morrison, T. Tatsuta, O. Tsuji, and J.F. Scott

Nanotechnology, 19, 375302, 2008.

DOI: 10.1088/0957-4484/19/37/375302


Conformal oxide coating of carbon nanotubes

S. Kawasaki, G. Catalan, H.J. Fan, M.M. Saad, J.M. Gregg, M.A. Correa-Duarte, J. Rybczynski, F. D. Morrison, T. Tatsuta, O. Tsuji, and J.F. Scott

Appl. Phys. Lett., 92, 053109, 2008.

DOI: 10.1063/1.2841710


Constant-phase-element (CPE) modelling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors

F.D. Morrison, D.J. Jung and J.F. Scott

J. App. Phys., 101, 094112, 2007.

DOI: 10.1063/1.2723194


Impedance spectroscopy of epitaxial multiferroic thin films

R. Schmidt, W. Eerenstein, T. Winiecki, F.D. Morrison and P.A. Midgley

Phys. Rev. B., 75 245111, 2007.

DOI: 10.1103/PhysRevB.75.245111


Towards Self-assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/inch2 Densities

P.R. Evans, X. Zhu, P. Baxter, R.J. Pollard, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott

Nano Lett., 7 (5), 1134, 2007.

DOI: 10.1021/nl0626028


Perovskite Lead Zirconium Titanate Nanorings: Towards Nanoscale Ferroelectric ‘Solenoids’?

X.H. Zhu, P.R. Evans, D. Byrne, A. Schilling, C. Douglas, R.J. Pollard, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott

Appl. Phys. Lett., 89, 122913, 2006.

DOI: 10.1063/1.2347893


Phase separation in lead zirconate titanate and bismuth titanate during electrical shorting and fatigue

X.-J. Lou, X.-B. Hu, M. Zhang, F.D. Morrison, S.A.T. Redfern and J.F. Scott

J. Appl. Phys., 99 044101, 2006.

DOI: 10.1063/1.2171783


Growth of highly resistive epitaxial BiMnO3 films

W. Eerenstein, F.D. Morrison, J.F. Scott, N.D. Mathur

Appl. Phys. Lett., 86, 110196, 2005.

DOI: 10.1063/1.2039988


Interaction between quantum paraelectricity and ferroelasticity in SrTiO3

S.A. Hayward, F.D. Morrison and J.F. Scott,

J. Phys.: Condens. Matt., 17, 7009-7022, 2005

DOI: 10.1088/0953-8984/17/43/018


Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures

J.F. Scott, P. Zubko, X.-J. Lou, F.D. Morrison, S. Rios, D.J. Jung, V.M. Kugler, M. Zhang, M. Miyake, M.M. Saad, A. Lookman, R.M. Bowman, J.M. Gregg, T.J. Leedham, O. Tsuji and T. Tatsuta

J. Am. Ceram. Soc., 88, 1691-1701, 2005.

DOI: 10.1111/j.1551-2916.2005.00486.x


Transformation processes in LaAlO3: neutron diffraction, dielectric, thermal, optical and Raman studies

S.A. Hayward, F.D. Morrison, S.A.T. Redfern, E.K.H. Salje, J.F. Scott, K.S. Knight, S. Tarantino, A.M. Glazer, V. Shuvaeva, P. Daniel, M. Zhang, M.A. Carpenter

Phys. Rev. B., 72, 054110, 2005.

DOI: 10.1103/PhysRevB.72.054110


High-Field Conduction in Barium Titanate

F.D. Morrison, P. Zubko, D.J. Jung, J.F. Scott, P. Baxter, M.M. Saad, J.M. Gregg and R.M. Bowman

Appl. Phys. Lett., 86, 152903, 2005.

DOI: 10.1063/1.1886899


Comment on Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures

W. Eerenstein, F.D. Morrison, J. Dho, M.G. Blamire, J.F. Scott and N.D. Mathur

Science, 307 (5713), 1203a, 2005.

DOI: 10.1126/science.1105422


Fatigue Studies in Compensated Bulk Lead Zirconate Titanate

C. Verdier, F.D. Morrison, D.C. Lupascu and J.F. Scott

J. App. Phys., 97 (2) 024107, 2005.

DOI: 10.1063/1.1829790


Intrinsic dielectric response in ferroelectric nano-capacitors

M.M. Saad, P. Baxter, R.M. Bowman, J.M. Gregg, F.D. Morrison and J.F. Scott

J. Phys.: Condens. Matt., 16, L451-456, 2004.

DOI: 10.1088/0953-8984/16/41/L04


Effect of micro-geometry on switching and Transport in PZT capacitors: Implications for Etching in Nano-Ferroelectrics

D.J. Jung, F.D. Morrison, M. Dawber, H.H. Kim, K. Kim and J.F. Scott

J. App. Phys., 95 (9), 4968-75, 2004.

DOI: 10.1063/1.1688990


Ferroelectric Nanotubes

F.D. Morrison, Y. Luo, I. Szafraniak, V. Nagarajan, R.B. Wehrspohn, M. Steinhart, J.H. Wendorff, N.D. Zakharov, E.D. Mishina, K.A. Vorotilov, A.S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, and J.F. Scott

Rev. Adv. Mat. Sci., 4 (2), 114-122, 2003.

URL: http://www.ipme.ru/e-journals/RAMS/no_2403/morrison/morrison.pdf


High-Aspect-Ratio Piezoelectric Strontium-Bismuth-Tantalate Nanotubes

F.D. Morrison, L. Ramsay and J.F. Scott,

J. Phys.: Condens. Matt., 15, L527-L532, 2003.

DOI: 10.1088/0953-8984/15/33/103


CaCu3Ti4O12: one-step internal barrier layer capacitor

D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West

Appl. Phys. Lett., 80 (12), 2153-2155, 2002.

DOI: 10.1063/1.1463211


Charge Compensation Mechanisms in La-doped BaTiO3

F.D. Morrison, D.C. Sinclair and A.R. West

J. Electroceram., 6 (3), 219-242, 2001.

DOI: 10.1023/A:1011400630449


Characterization of La-Doped BaTiO3 Ceramics Using Impedance Spectroscopy

F.D. Morrison, D.C. Sinclair and A.R. West

J. Am. Ceram. Soc., 84 (3), 531-538, 2001.

DOI: 10.1111/j.1151-2916.2001.tb00694.x


An Alternative Explanation for the Origin of the Resistivity Anomaly in La-Doped BaTiO3

F.D. Morrison, D.C. Sinclair and A.R. West

J. Am. Ceram. Soc., 84 (2), 474-476, 2001.

DOI: 10.1111/j.1151-2916.2001.tb00684.x


Electrical and structural characteristics of lanthanum-doped barium titanate ceramics

F.D. Morrison, D.C. Sinclair and A.R. West

J. Appl. Phys., 88 (11), 6355-66, 1999.

DOI: 10.1063/1.371698


Structure and electrical properties of oxygen-deficient hexagonal BaTiO3

D.C. Sinclair, J.M.S. Skakle, F.D. Morrison, R.I. Smith and T.P. Beales

J. Mater. Chem., 9, 1327-31, 1999.

DOI: 10.1039/a900957d


Dielectric Properties of Spark-Plasma-Sintered BaTiO3

T. Takeuchi, E. Bétourné, M. Tabuchi, Y. Kobayashi, A.M. Coats, F.D. Morrison, D.C. Sinclair, A.R. West and H. Kageyama

J. Mat. Sci., 34, 917-24, 1999.

DOI: 10.1023/A:1004506905278


Novel Doping Mechanism to Very-High-Permittivity Barium Titanate Ceramics

F.D. Morrison, D.C. Sinclair, J.M.S. Skakle and A.R. West

J. Am. Ceram. Soc., 81 (7), 1957-60, 1998.

DOI: 10.1111/j.1151-2916.1998.tb02575.x


Section 2: (Refereed) Contributions to symposia and compiled volumes


Ferroelectric Thin-Film Devices

J. F. Scott and F. D. Morrison

Ferroelectrics, 371(1) 3, 2008.

DOI: 10.1080/00150190802384500


Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes

M. Miyake, J.F. Scott, X.J. Lou, F.D. Morrison, S. Motoyama, T. Tatsuta and O. Tsuji

Sixteenth IEEE International Symposium on Applications of Ferroelectrics (ISAF 2007), 27-31, 38-41, 2007.

DOI: 10.1109/ISAF.2007.4393160


Ferroelectric Thin-Film Devices: Failure Mechanisms and New Prototype Nano-Structures

J.F. Scott, F.D. Morrison, Y.K. Hoo, A.D. Milliken, H.J. Fan, S. Kawasaki, M. Miyake, T. Tatsuta, O. Tsuji

Sixteenth IEEE International Symposium on Applications of Ferroelectrics (ISAF 2007), 27-31, 5 – 8, 2007.

DOI: 10.1109/ISAF.2007.4393150


Nanoscale ferroelectrics machined from single crystals

A. Schilling, T.B. Adams, M.M. Saad, P. Baxter, F.D. Morrison, G. Catalan, J.F. Scott, R.M. Bowman, J.M. Gregg

Integr. Ferroelectr., 92, 53-64, 2007.

DOI: 10.1080/10584580701746889


Liquid Source Misted Chemical Deposition Process Of Three-Dimensional Nano-Ferroelectrics With Substrate Heating

S. Kawasaki, J. F. Scott, H. Fan, G. Catalan, M. M. Saad, J. M. Gregg, M. A. Correa, F. D. Morrison, T. Tatsuta, O. Tsuji

Integr. Ferroelectr., 95, 180- 86, 2007.

DOI: 10.1080/10584580701758793


Experimental difficulties and artefacts in multiferroic and magnetoelectric thin films of BiFeO3, Bi0.6Tb0.3La0.1FeO3 and BiMnO3

W. Eerenstein, F.D. Morrison, F. Sher, J.L. Prieto, J.P. Attfield, J.F. Scott and N.D. Mathur

Phil. Mag. Lett., 87 (3-4), 249-257, 2007.

DOI: 10.1080/09500830601173053


Investigating the effects of reduced size on the properties of ferroelectrics

M.M. Saad, P.  Baxter, J. McAneney, A. Lookman, L.J.  Sinnamon, P.  Evans, A. Schilling, T. Adams, X. Zhu, R.J. Pollard, R.M. Bowman, J.M. Gregg, D.J. Jung, F.D. Morrison and J.F. Scott

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 53 (12) 2208, 2006.

DOI: 10.1109/TUFFC.2006.168


Nano-Ferroelectric Materials and Devices

J.F. Scott, F.D. Morrison, M. Miyake and P. Zubko

Ferroelectrics, 336, 237, 2006.

DOI: 10.1080/00150190600697699


Layered Functional Ceramics via Misted Chemical Solution Deposition

J.F. Scott, F.D. Morrison, M. Miyake, T. Tatsuta, O. Tsuji

Key Engineering Materials, 333 71, 2007.

URL: http://www.scientific.net/0-87849-424-3/71/


Ferroelectric Properties of FIB-prepared single crystal nanocapacitors

A. Schilling, M.M. Saad, P. Baxter, T. Adams, R. M. Bowman, J. M. Gregg, F. D. Morrison and J. F. Scott

NSTI-Nanotech 2005 Proceedings, ISBN 0-9767985-1-4, Vol. 2, 2005

URL: http://www.nsti.org/procs/Nanotech2005v2/5/M31.04


High-temperature amorphous hafnia (HfO2) for microelectronics

M. Miyake, X. -J. Lou, Ming Zhang, F. D. Morrison, T. J. Leedham, T. Tatsuta, O. Tsuji, J. F. Scott

Integr. Ferroelectr., 74, 165-172, 2005.

DOI: 10.1080/10584580500414176


Exploring the fundamental effects of miniaturisation on ferroelectrics by focused ion beam processing of single crystal material

M.M. Saad, P. Baxter, A. Schilling, T.B. Adams, X. Zhu, R.M. Bowman, J.M. Gregg, P. Zubko, F.D. Morrison and J.F. Scott

J. Phys. IV, 128, 63-70, 2005.

DOI: 10.1051/jp4:2005128010


Novel High Capacitance Materials:- BaTiO3:La and CaCu3Ti4O12

A.R. West, T.B. Adams, F.D. Morrison and D.C. Sinclair

J. Euro. Ceram. Soc., 24, 1439-1448, 2004 (Proceedings of Electroceramics VIII, 2002, Rome, Italy)

DOI: 10.1016/S0955-2219(03)00510-7


New Developments in Ferroelectric Thin Films

J.F. Scott, M. Dawber, A.Q. Jiang and F.D. Morrison

Ferroelectrics, 286, 223-235, 2003.

DOI: 10.1080/00150190390206400


Probing Interfacial Phenomena in CaCu3Ti4O12 and La-doped BaTiO3 Ceramics Using Impedance Spectroscopy,

D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West

Chapter in “Grain Boundary Engineering in Electronic Materials”, ed. R. Freer, J. Van Herle, J. Petzel and C. Leech, Maney, Leeds, 2003. ISBN 1 90265 377 7


Use of the "Mist" (Liquid-Source) Deposition System to Produce New High-Dielectric Devices:  Ferroelectric-filled Photonic Crystals and Hf-oxide and Related Buffer Layers for Ferroelectric-Gate FETs

F.D. Morrison, J. F. Scott, M. Alexe, T.J. Leedham, T. Tatsuta and O. Tsuji

Microelectron. Eng., 66 (1-4), 591-599, 2003 (Proceedings of IUMRS 8th International Conference on Electronic Materials, 2002, Xi’an, China)

DOI: 10.1016/S0167-9317(02)00970-X


Doping Mechanisms and Electrical Properties of La-Doped BaTiO3 Ceramics

F.D. Morrison, D.C. Sinclair and A.R. West

Int. J. Inorg. Mat., 3, 1205-1210, 2001 (Proceedings of E-MRS Spring Meeting 2000, Strasbourg, France)

DOI: 10.1016/S1466-6049(01)00128-3


Applications of Combined Impedance and Electric Modulus Spectroscopy to Characterise Electroceramics

D.C. Sinclair, F.D. Morrison and A.R. West

International Ceramics, Issue 2, 33-38, 2000.

DOI: N/A


Section 3: Patents


Patent info: GB2429202

IP Title: Deposition of Layers on Substrates, Inventor(s): MORRISON, F.D., SCOTT J.F., Published 26.09.2007.


Patent info: GB2435265

IP Title: Processes of Forming Small Diameter Rods and Tubes, MORRISON, F.D., SCOTT J.F., Published 10.10.2007


Patent info: GB2435266

IP Title: Processes of Forming Small Diameter Rods and Tubes, MORRISON, F.D., SCOTT J.F., Published 10.10.2007


British Patent Application No. 0607890.1, filed April 2006. International Application No. PCT/GB2007/001437

IP Title: Nanostructures and a Method for the manufacture of the same (Single Layer Nanocapacitors), Inventor(s): BOWMAN R.M., GREGG J.M., POLLARD R.J., MORRISON F.D., SCOTT J.F.

Publications